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The effect of surface treatment of bottom contact organic thin film transistor

Title
The effect of surface treatment of bottom contact organic thin film transistor
Author
박진성
Keywords
Organic thin film transistor (OTFT); PMMA; MNB; Contact resistance; Sequence of surface treatment; Wettability
Issue Date
2011-08
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Synthetic metals, Vol.161 No.17-18 [2011], 1953-1957
Abstract
A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (Ion), although a bottom contact structure was exploited. The lack of increase in the contact resistance (Rc) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA→MNB showed much better Ion behavior than those fabricated with MNB→PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence.
URI
http://www.sciencedirect.com/science/article/pii/S0379677911002931?via%3Dihub
ISSN
0379-6779
DOI
10.1016/j.synthmet.2011.07.001
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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