54 0

In(2)O(3) Nanocrystal Memory with the Barrier Engineered Tunnel Layer

Title
In(2)O(3) Nanocrystal Memory with the Barrier Engineered Tunnel Layer
Author
김영호
Keywords
In2O3; Nanocrystals; Nano-Floating Gate Memory; Nonvolatile Memory; Tunnel
Issue Date
2011-01
Publisher
AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 권: 11 호: 1 페이지: 437-440
Abstract
In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.
URI
http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00071
ISSN
1533-4880
DOI
10.1166/jnn.2011.3164
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE