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dc.contributor.author박재근-
dc.date.accessioned2018-02-13T04:59:14Z-
dc.date.available2018-02-13T04:59:14Z-
dc.date.issued2012-01-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 권: 159, 호: 4, 페이지: H363--H366en_US
dc.identifier.issn0013-4651-
dc.identifier.urihttp://jes.ecsdl.org/content/159/4/H363-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/37092-
dc.description.abstractWe investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K3Fe(CN)(6) in the acid slurry formed the K2WO4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO3)(3). Furthermore, the addition of H2O2 in the acid solution including K3Fe(CN)(6) enhances the chemical dissolution rate of the K2WO4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.010204jes] All rights reserved.en_US
dc.description.sponsorshipThis investigation was financially supported by the Brain Korea 21 Project in 2011, the IT R&D program of MKE/KEIT (KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM). The authors thank Sumco Corp. for helping with the experiments.en_US
dc.language.isoenen_US
dc.publisherELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USAen_US
dc.titleEffect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarizationen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume159-
dc.identifier.doi10.1149/2.010204jes-
dc.relation.page363-366-
dc.relation.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.contributor.googleauthorLim, Jae-Hyung-
dc.contributor.googleauthorPark, Jin-Hyung-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2012205950-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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