Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization
- Title
- Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization
- Author
- 박재근
- Issue Date
- 2012-01
- Publisher
- ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 권: 159, 호: 4, 페이지: H363--H366
- Abstract
- We investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K3Fe(CN)(6) in the acid slurry formed the K2WO4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO3)(3). Furthermore, the addition of H2O2 in the acid solution including K3Fe(CN)(6) enhances the chemical dissolution rate of the K2WO4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.010204jes] All rights reserved.
- URI
- http://jes.ecsdl.org/content/159/4/H363http://hdl.handle.net/20.500.11754/37092
- ISSN
- 0013-4651
- DOI
- 10.1149/2.010204jes
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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