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Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization

Title
Effect of Potassium Ferricyanide in the Acid Solution on Performance of Tungsten Chemical Mechanical Planarization
Author
박재근
Issue Date
2012-01
Publisher
ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 권: 159, 호: 4, 페이지: H363--H366
Abstract
We investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical planarization (CMP) of tungsten film using the acid slurry. The addition of K3Fe(CN)(6) in the acid slurry formed the K2WO4 layer on the tungsten film surface, thereby increasing the polishing rate and decreasing the surface roughness of the tungsten film after CMP, which demonstrated better CMP performance than the oxidizer Fe(NO3)(3). Furthermore, the addition of H2O2 in the acid solution including K3Fe(CN)(6) enhances the chemical dissolution rate of the K2WO4 layer on the tungsten film surface, considerably increasing the polishing rate and decreasing surface roughness of the tungsten film. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.010204jes] All rights reserved.
URI
http://jes.ecsdl.org/content/159/4/H363http://hdl.handle.net/20.500.11754/37092
ISSN
0013-4651
DOI
10.1149/2.010204jes
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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