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High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires

Title
High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires
Author
장재영
Keywords
ow-voltage; bending-stability; hysteresis-free; metallic fiber; organic field-effect transistor; e-textiles
Issue Date
2012-01
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
ACS APPLIED MATERIALS & INTERFACES, 권: 4, 호: 1, 페이지: 6-10
Abstract
We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al2O3 gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al2O3 gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm(-2) and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm(2) V-1 s(-1) within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius similar to 2.2.
URI
https://pubs.acs.org/doi/abs/10.1021/am2011405
ISSN
1944-8244
DOI
10.1021/am2011405
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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