A MINIATURE CMOS VCO WITH SYMMETRIC TRACE DIFFERENTIAL STACKED SPIRAL INDUCTOR
- Title
- A MINIATURE CMOS VCO WITH SYMMETRIC TRACE DIFFERENTIAL STACKED SPIRAL INDUCTOR
- Author
- 김형동
- Keywords
- CMOS VCO; voltage controlled oscillator; stacked spiral inductor; parasitic capacitance; self-resonance frequency
- Issue Date
- 2011-07
- Publisher
- WILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol.53 No.7 [2011], 1588-1591
- Abstract
- In this study, a miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) was used in the design of a voltage controlled oscillator (VCO) using standard 0.18 mu m CMOS technology. The SDSSI has a high self-resonance frequency (f(sr)) and quality factor (Q) in spite of using the stacking technique, because the parasitic capacitance between the layers is reduced by alternatively locating traces at different positions in each layer. The output power spectrum and phase noise of the designed VCO is -0.79 dBm and 114 dBc/Hz at 1-MHz offset frequency, respectively. The oscillation frequencies cover from 1.84 GHz to 2.38 GHz with a tuning range of 26%, while the occupied on-chip area of the VCO is only 350 x 450 mu m(2). (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53: 1588-1591, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26073
- URI
- http://onlinelibrary.wiley.com/doi/10.1002/mop.26073/abstract
- ISSN
- 0895-2477
- DOI
- 10.1002/mop.26073
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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