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Microstructural characterization at the interface of Al2O3/ZnO/Al2O3 thin films grown by atomic layer deposition

Title
Microstructural characterization at the interface of Al2O3/ZnO/Al2O3 thin films grown by atomic layer deposition
Author
전형탁
Keywords
deposition methods; interfaces; TEM; ZnAlO; ZnO
Issue Date
2011-07
Publisher
WILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOL.248, no.7, 2011년, pp.1634 - 1638
Abstract
In this study, the effects of the annealing temperature and time on Al2O3/ZnO/Al2O3 thin films grown by the atomic layer deposition (ALD) method were examined using transmission electron microscopy (TEM) and energy dispersion spectroscopy (EDS). Samples were annealed for 30s at 600, 620, and 700 degrees C in a N-2 atmosphere, and other samples were annealed for 30s, 5 min, and 10 min at 700 degrees C. The decrease in the thickness of ZnO showed a parabolic tendency at these temperature and time ranges, and ZnAl2O4 was formed by the reaction between ZnO and Al2O3 at 620 degrees C. Although the generated ZnAl2O4 grains could not have strict epitaxial relations with the ZnO grains, the stain in the ZnAl2O4 grains was considerably influenced by the orientation relation between ZnO and ZnAl2O4 which was related to the oxygen rearrangement for the ZnAl2O4 generation. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201046551/abstracthttp://hdl.handle.net/20.500.11754/36819
ISSN
0370-1972
DOI
10.1002/pssb.201046551
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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