62 0

Characterization of Sn-doped CuO thin films prepared by a sol-gel method

Title
Characterization of Sn-doped CuO thin films prepared by a sol-gel method
Author
Hui, Kwan-San
Keywords
ELECTRICAL-PROPERTIES; OXIDE; NI; NANOSTRUCTURES; NANOCOMPOSITE; NANOPARTICLES; FABRICATION; DEPOSITION; GROWTH; FE
Issue Date
2016-03
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE, v. 27, NO 2, Page. 1719-1724
Abstract
This study examined the influence of the Sn doping concentration on the structural, electrical and optical properties of Sn-doped copper oxide (Sn:CuO) thin films synthesized on glass substrates using a facile sol-gel method. The samples were characterized by X-ray diffraction, energy dispersive X-ray analysis, scanning electron microscopy, Hall Effect measurements, and UV-visible spectroscopy. The carrier concentration, Hall mobility and resistivity of the Sn:CuO films were 9.14 x 10(15)-1.08 x 10(16) cm(-3), 6.14-10.5 cm(2)/Vs and 47.4-77.5 a"broken vertical bar cm, respectively. The crystallite size of the films decreased with increasing Sn content from 84.1 to 61.8 nm. The band gap trended downward from 2.0 to 1.95 eV with increasing Sn doping content. The results showed that SnO2 doping strongly affects the structural, electrical and optical properties of the films.
URI
https://link.springer.com/article/10.1007%2Fs10854-015-3945-8http://hdl.handle.net/20.500.11754/36783
ISSN
0957-4522; 1573-482X
DOI
10.1007/s10854-015-3945-8
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE