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Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires

Title
Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires
Author
김현우
Keywords
Nanostructures; Chemical synthesis; Transmission electron microscopy; ACCEPTOR PAIR RECOMBINATION; LIGHT-EMITTING-DIODES; OXYGEN VACANCIES; PHOTOLUMINESCENCE; LUMINESCENCE; NANOWIRES; GREEN; FABRICATION; DEFECTS
Issue Date
2011-09
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
Applied Surface Science, Vol.257, No.22, p9420-9424
Abstract
We have synthesized GaN-core/ZnO-shell nanowires and investigated effects of the ZnO coating. The Xray diffraction pattern showed that as-synthesized samples are composed of GaN and ZnO. Transmission electron microscopy indicated that the deposited ZnO shell layer is poly-crystalline. The photoluminescence (PL) spectrum of GaN has been changed by the ZnO coating, where emission bands centered at roughly 1.9 eV, 2.5 eV, and 3.3 eV were newly added to the emissions from core GaN nanowires. We found that overall PL intensity has been significantly increased by coating the ZnO shell layers. (C) 2011 Elsevier B. V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0169433211008841?via%3Dihubhttp://hdl.handle.net/20.500.11754/36765
ISSN
0169-4332
DOI
10.1016/j.apsusc.2011.06.022
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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