Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 백운규 | - |
dc.date.accessioned | 2018-02-12T01:12:25Z | - |
dc.date.available | 2018-02-12T01:12:25Z | - |
dc.date.issued | 2011-09 | - |
dc.identifier.citation | NANO RESEARCH, Vol.4, No.9 [2011], p817-823 | en_US |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007%2Fs12274-011-0138-5 | - |
dc.description.abstract | We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of similar to 90% for a NW density of similar to 20-25 per 10 mu m. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics. | en_US |
dc.description.sponsorship | This work was supported by the Korea Reserarch Foundation Grant funded by the Kroean Government (MOEHRD, Basic Research Promotion Fund) (No.KRF-2007-331-D00194) and by the National Research Foundation of Korea (NRF) through a Grant (No. K2070400000307, Gloval Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science and Technology (MEST) in 2009. | en_US |
dc.language.iso | en | en_US |
dc.publisher | TSINGHUA UNIV PRESS, TSINGHUA UNIV, RM A703, XUEYAN BLDG, BEIJING, 10084, PEOPLES R CHINA | en_US |
dc.subject | Si nanowire | en_US |
dc.subject | optical properties | en_US |
dc.subject | transparent thin film transistor | en_US |
dc.subject | finite-difference time-domain (FDTD) modeling | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | LIGHT-EMITTING-DIODES | en_US |
dc.subject | FABRICATION | en_US |
dc.subject | SEMICONDUCTORS | en_US |
dc.subject | SILICON | en_US |
dc.subject | DEVICES | en_US |
dc.title | Optical properties of laterally aligned Si nanowires for transparent electronics applications | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1007/s12274-011-0138-5 | - |
dc.relation.page | 817-823 | - |
dc.relation.journal | NANO RESEARCH | - |
dc.contributor.googleauthor | Park, Won-Il | - |
dc.contributor.googleauthor | Yi, Jae-Seok | - |
dc.contributor.googleauthor | Rogers, John A. | - |
dc.contributor.googleauthor | Lee, Dong-Hyun | - |
dc.contributor.googleauthor | Lee, Won-Woo | - |
dc.contributor.googleauthor | Paik, Un-Gyu | - |
dc.relation.code | 2011221072 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | upaik | - |
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