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dc.contributor.author백운규-
dc.date.accessioned2018-02-12T01:12:25Z-
dc.date.available2018-02-12T01:12:25Z-
dc.date.issued2011-09-
dc.identifier.citationNANO RESEARCH, Vol.4, No.9 [2011], p817-823en_US
dc.identifier.issn1998-0124-
dc.identifier.urihttps://link.springer.com/article/10.1007%2Fs12274-011-0138-5-
dc.description.abstractWe have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of similar to 90% for a NW density of similar to 20-25 per 10 mu m. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%-95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.en_US
dc.description.sponsorshipThis work was supported by the Korea Reserarch Foundation Grant funded by the Kroean Government (MOEHRD, Basic Research Promotion Fund) (No.KRF-2007-331-D00194) and by the National Research Foundation of Korea (NRF) through a Grant (No. K2070400000307, Gloval Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science and Technology (MEST) in 2009.en_US
dc.language.isoenen_US
dc.publisherTSINGHUA UNIV PRESS, TSINGHUA UNIV, RM A703, XUEYAN BLDG, BEIJING, 10084, PEOPLES R CHINAen_US
dc.subjectSi nanowireen_US
dc.subjectoptical propertiesen_US
dc.subjecttransparent thin film transistoren_US
dc.subjectfinite-difference time-domain (FDTD) modelingen_US
dc.subjectTHIN-FILM TRANSISTORSen_US
dc.subjectLIGHT-EMITTING-DIODESen_US
dc.subjectFABRICATIONen_US
dc.subjectSEMICONDUCTORSen_US
dc.subjectSILICONen_US
dc.subjectDEVICESen_US
dc.titleOptical properties of laterally aligned Si nanowires for transparent electronics applicationsen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume4-
dc.identifier.doi10.1007/s12274-011-0138-5-
dc.relation.page817-823-
dc.relation.journalNANO RESEARCH-
dc.contributor.googleauthorPark, Won-Il-
dc.contributor.googleauthorYi, Jae-Seok-
dc.contributor.googleauthorRogers, John A.-
dc.contributor.googleauthorLee, Dong-Hyun-
dc.contributor.googleauthorLee, Won-Woo-
dc.contributor.googleauthorPaik, Un-Gyu-
dc.relation.code2011221072-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidupaik-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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