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Issue DateTitleAuthor(s)
2023-08Thin-film image sensors with a pinned photodiode structure이지원
2023-08Electrostatic moire potential from twisted hexagonal boron nitride layers김수은
2023-08EAM-integrated DBR-LD with 16-channel and 100-Gbps/lambda PAM-4 modulation심종인
2023-09Regulation of Interfacial Anchoring Orientation of Anisotropic Nanodumbbells안일신
2023-10Numerical Analysis of Light Extraction Efficiency of a Core-shell Nanorod Light-emitting Diode김영현
2023-10Background free in vivo 29Si MR imaging with hyperpolarized PEGylated silicon nanoparticles김지원
2023-11A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity이지원
2023-11Improved Performance and Bias Stability of Indium-Tin-Zinc-Oxide Thin-Film Transistors Enabled by an Oxygen-Compensated Capping Layer김재균
2023-12A PAM-4 100 Gbps single-drive strained SiGe optical lumped Mach-Zehnder modulator for O-band application김영현
2022-09Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures심종인
2022-02High-power ytterbium-doped fibre master-oscillator power-amplifier at 1018 nm김지원
2023-03Accurate detection of enzymatic degradation processes of gelatin-alginate microcapsule by H-1 NMR spectroscopy: Probing biodegradation mechanism and kinetics김지원
2016-01Efficiency analysis of AlGaN deep UV-LEDs based on rate equation심종인
2022-07Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress심종인
2022-07Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates심종인
2011-07High power Er:YAG laser with radially-polarized Laguerre-Gaussian (LG(01)) mode output김지원
2013-12Q-switched Nd:YAG optical vortex lasers김지원
2014-04Suppression of self-pulsing in Yb fibre lasers coupled with external Fabry-Perot cavity김지원
2023-05Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wells김지원
2011-02Effect of current spreading on the efficiency droop of InGaN light-emitting diodes심종인

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