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The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode

Title
The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode
Author
박진성
Keywords
Al doped ZnO (AZO); Transparent conductive oxide (TCO); Organic light emitting diodes (OLEDs); Atomic layer deposition (ALD)
Issue Date
2011-03
Publisher
Elsevier Science SA
Citation
Synthetic Metals, 2011, 161(9-10), P.823-827
Abstract
Al doped zinc oxide (AZO) films, deposited by atomic layer deposition (ALD) were investigated for applying a transparent conductive oxide (TCO) layer as an anode for organic light emitting diode (OLED) devices. AZO films with a thickness of 100 nm were deposited at various Al atomic ratios ranging from 0 to 5% at a deposition temperature (250 degrees C). The optimum electrical properties: the carrier mobility, the resistivity, and the sheet resistance for the 2% AZO film were found to be 16.2 cm(2) V-1 s(-1), 1.5 x 10(-3) cm(-3), and 217 Omega/sq. respectively. The red OLED devices were fabricated using AZO anodes utilizing the various Al atomic ratios; the electrical and optical characteristics were then investigated. The best luminance, quantum efficiency, and current efficiency were found in the OLED device using the 2% AZO TCO; the results were 16599 cd/m(2), 8.2%, and 7.5 cd/A, respectively. (C) 2011 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0379677911000531
ISSN
0379-6779
DOI
10.1016/j.synthmet.2011.02.007
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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