Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure
- Title
- Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure
- Author
- 김영호
- Keywords
- FILMSThis work was supported in part by the National Program for 0.1 Terabit Non-Volatile Memory Devices by the Ministry of Knowledge Economy and the Mid-career Researcher Program through the National Research Foundation funded by the Ministry of Education, Science and Technology (Grant No. 2010-0014498), and the Research fund of Hanyang University (HYU-2010-HYURS). D. U. Lee acknowledges to the NRF funded by the Korea Government (MEST) (NRF-2010-355-C00021).
- Issue Date
- 2011-03
- Publisher
- Springer
- Citation
- Applied Physics A, 2011, 102(4), P.933-938
- Abstract
- A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions.
- URI
- https://link.springer.com/article/10.1007%2Fs00339-011-6275-6
- ISSN
- 0947-8396
- DOI
- 10.1007/s00339-011-6275-6
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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