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Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure

Title
Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure
Author
김영호
Keywords
FILMSThis work was supported in part by the National Program for 0.1 Terabit Non-Volatile Memory Devices by the Ministry of Knowledge Economy and the Mid-career Researcher Program through the National Research Foundation funded by the Ministry of Education, Science and Technology (Grant No. 2010-0014498), and the Research fund of Hanyang University (HYU-2010-HYURS). D. U. Lee acknowledges to the NRF funded by the Korea Government (MEST) (NRF-2010-355-C00021).
Issue Date
2011-03
Publisher
Springer
Citation
Applied Physics A, 2011, 102(4), P.933-938
Abstract
A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions.
URI
https://link.springer.com/article/10.1007%2Fs00339-011-6275-6
ISSN
0947-8396
DOI
10.1007/s00339-011-6275-6
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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