Effects of the substrate temperature on the Cu seed layer formed using atomic layer deposition
- Title
- Effects of the substrate temperature on the Cu seed layer formed using atomic layer deposition
- Author
- 박종완
- Keywords
- Cu seed layer; Atomic layer deposition; Cu interconnect; Surface energy
- Issue Date
- 2011-03
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v. 519, NO 11, Page. 3636-3640
- Abstract
- Cu has replaced Al as the main interconnection material in ultra-large integrated circuits, reducing resistance capacitance delay and yielding higher electro-migration reliability. As feature size decreases, however, it has become more difficult to produce reliable Cu wiring. We studied a Cu seed layer deposited using plasma enhanced atomic layer deposition (PEALD). The electrical properties of the PEALD Cu thin film with sub-10 nm thickness were determined by the continuities and morphologies of the films. At a deposition temperature of 150 degrees C. the resistivity of Cu thin films was 5.2 mu Omega-cm and the impurity content was below 5 atomic %. Based on these results, Cu seed layers were deposited on 32-nm Ta/SiO2 trench substrates, and electrochemical plating was performed under conventional conditions. A continuous seed layer was deposited using PEALD, resulting in a perfectly filling of the 32-nm sized trench. (C) 2011 Elsevier B.V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609011004111?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.01.346
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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