64 0

Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide

Title
Chemical Mechanical Planarization Mechanism for Nitrogen-Doped Polycrystalline Ge2Sb2Te5 Film Using Nitric Acidic Slurry Added with Hydrogen Peroxide
Author
박재근
Keywords
THIN-FILMS; MEMORY
Issue Date
2011-04
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 158, NO 6, Page. 666-670
Abstract
We investigated the chemical mechanical planarization (CMP) mechanism of nitrogen-doped polycrystalline Ge2Sb2Te5 (pc-GST) using nitric acid slurry without or with 1.0 wt % hydrogen peroxide (H2O2). Without H2O2, the pc-GST film surface undergoes selective corrosion of Ge and Sb, resulting in pitting corrosion. Otherwise, with H2O2, the pc-GST film surface produces a Ge, Sb, Te oxide layer, thereby introducing a cyclic polishing process such as chemical oxidation, chemical and mechanical polishing, and sequential chemical oxidation. As a result, the polishing rate increased up to similar to 1000 angstrom/min and the surface roughness decreased to 0.858 nm. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3571529] All rights reserved.
URI
http://jcr.incites.thomsonreuters.com/JCRJournalProfileAction.action?SID=A2-dFdAuK5FWpBxx7sr3Wx2Bz40T0gAfqAcvp4-18x2dZPRVmwez0Wzsoix2BefrHXeAx3Dx3DOdG6OoRZU7rx2BfbF8zjJvAwx3Dx3D-9vvmzcndpRgQCGPd1c2qPQx3Dx3D-wx2BJQh9GKVmtdJw3700KssQx3Dx3D&issn=0013-4651&SrcApp=IC2LS&Init=Yes&tab=RANKhttp://hdl.handle.net/20.500.11754/35090
ISSN
0013-4651
DOI
10.1149/1.3571529
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE