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Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization

Title
Controlled Growth of Rubrene Nanowires by Eutectic Melt Crystallization
Author
이상욱
Keywords
FIELD-EFFECT TRANSISTORS; HABIT CONTROLLING FACTOR; ATTACHMENT ENERGY; POLYMER NANOWIRE; SINGLE-CRYSTALS; THIN-FILM; SOLVENTS; ORIENTATION; TEMPERATURE; EPITAXY
Issue Date
2016-03
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v. 6, Article number 23108, Page. 23108-23118
Abstract
Organic semiconductors including rubrene, Alq(3), copper phthalocyanine and pentacene are crystallized by the eutectic melt crystallization. Those organic semiconductors form good eutectic systems with the various volatile crystallizable additives such as benzoic acid, salicylic acid, naphthalene and 1,3,5-trichlorobenzene. Due to the formation of the eutectic system, organic semiconductors having originally high melting point (T-m ˃ 300 degrees C) are melted and crystallized at low temperature (T-e = 40.8-133 degrees C). The volatile crystallizable additives are easily removed by sublimation. For a model system using rubrene, single crystalline rubrene nanowires are prepared by the eutectic melt crystallization and the eutectic-melt-assisted nanoimpinting (EMAN) technique. It is demonstrated that crystal structure and the growth direction of rubrene can be controlled by using different volatile crystallizable additives. The field effect mobility of rubrene nanowires prepared using several different crystallizable additives are measured and compared.
URI
https://www.nature.com/articles/srep23108http://hdl.handle.net/20.500.11754/35022
ISSN
2045-2322
DOI
10.1038/srep23108
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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