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Effect of Rinse Process on Removal of Crown Type Defects during Photoresist Development

Title
Effect of Rinse Process on Removal of Crown Type Defects during Photoresist Development
Author
박진구
Keywords
NM IMMERSION LITHOGRAPHY; DUV RESIST; REDUCTION; DESIGN
Issue Date
2011-01
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 50, NO 1, Page. 016505-1-016505-4
Abstract
Defect reduction is one of the most important factors to improve the process stability and yield in the wafer fabrication process. Reduction of defects after development process is a critical issue in photolithography. A special category of post development defects is the "crown defect'' which is formed on large exposed or unexposed areas. In this work, the process was developed to remove crown defects from gate and hole patterns by optimizing the deionized water (DIW) rinse time and applying the sling effect. After testing at various conditions, it was found that 80 and 40 s DIW rinse combined with sling effect could completely remove the crown defects from gate and hole patterns, respectively, which would improve the product quality and yield.
URI
http://iopscience.iop.org/article/10.1143/JJAP.50.016505/meta
ISSN
0021-4922; 1347-4065
DOI
10.1143/JJAP.50.016505
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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