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Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach

Title
Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach
Author
박진성
Keywords
ROOM-TEMPERATURE; STABILITY
Issue Date
2011-04
Publisher
Electrochemical SOC INC
Citation
Journal of Electrochemical Society, 2011, 158(4), P.H433-H437
Abstract
We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.
URI
http://jes.ecsdl.org/content/158/4/H433
ISSN
0013-4651
DOI
10.1149/1.3552700
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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