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Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer

Title
Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer
Author
김태환
Keywords
Nonvolatile Memory Device; Polydopamine; Switching Mechanism; Capacitance-Voltage
Issue Date
2016-02
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 2, Page. 1685-1688
Abstract
Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams.
URI
http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000002/art00076http://hdl.handle.net/20.500.11754/34068
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2016.11967
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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