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Plasma-enhanced atomic layer deposition of tantalum nitridethin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma

Title
Plasma-enhanced atomic layer deposition of tantalum nitridethin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
Author
박진성
Keywords
Tantalum nitride thin films; Plasma-enhanced atomic layer deposition; Preferred orientation; Microstructure; Copper diffusion barrier
Issue Date
2016-02
Publisher
SPRINGER
Citation
JOURNAL OF ELECTROCERAMICS, v. 36, Page. 165-169
Abstract
Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigated at a growth temperature of 230 °C using an alternating supply of tertiary-amylimido-tris(dimethylamido)tantalum (TAIMATA, Ta[NC(CH3)2C2H5][N(CH3)2]3) and hydrogen (H2) plasma. As the H2 plasma power increased from 75 to 175 W, the electrical resistivity of the films was improved from 1900 to 680 μΩ·cm, mainly due to the improved crystallinity. Moreover, the preferred orientation ratio between TaN (200) and TaN (111) planes also abruptly increased from 0.8 to 2.8 with increasing the H2 plasma power. This preferred orientation change of the films from (111) to (200) improves the adhesion properties between Cu and TaN, while the Cu diffusion barrier performance was not significantly affected.
URI
https://link.springer.com/article/10.1007/s10832-016-0015-4http://hdl.handle.net/20.500.11754/31871
ISSN
1385-3449; 1573-8663
DOI
10.1007/s10832-016-0015-4
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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