A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition
- Title
- A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition
- Author
- 성명모
- Keywords
- FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; CVD-GROWN GRAPHENE; EPITAXIAL GRAPHENE; AIR-STABILITY; DIRAC POINT; PERFORMANCE; MOBILITY; BINDING; FILMS
- Issue Date
- 2016-02
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v. 8, NO 9, Page. 5000-5005
- Abstract
- Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 angstrom resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.
- URI
- http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C5NR08016A#!divAbstracthttp://hdl.handle.net/20.500.11754/31811
- ISSN
- 2040-3364; 2040-3372
- DOI
- 10.1039/c5nr08016a
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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