Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers
- Title
- Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers
- Author
- 송윤흡
- Keywords
- Magnetic Tunnel Junction; MgO; Degradation; Breakdown; Buffer Layer; Surface Roughness
- Issue Date
- 2016-01
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 1, Page. 654-657
- Abstract
- We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000001/art00074;jsessionid=2j15sgo4q48bx.x-ic-live-02http://hdl.handle.net/20.500.11754/31695
- ISSN
- 1533-4880; 1533-4899
- DOI
- 10.1166/jnn.2016.11901
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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