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dc.contributor.author김태환-
dc.date.accessioned2017-11-17T00:36:01Z-
dc.date.available2017-11-17T00:36:01Z-
dc.date.issued2016-01-
dc.identifier.citationORGANIC ELECTRONICS, v. 28, Page. 20-24en_US
dc.identifier.issn1566-1199-
dc.identifier.issn1878-5530-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1566119915301440?via%3Dihub-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/31475-
dc.description.abstractMultilevel resistive memory devices with an intermediate state were fabricated utilizing a poly(methylmethacrylate) (PMMA) layer sandwiched between double-stacked PMMA layers containing CdSe/ZnS core shell quantum dots (QDs). The current voltage (I-V) curves on a Al/[PMMA:CdSe/ZnS QD]/PMMA/[PMMA:CdSe/ZnS QD]/indium-tin-oxide/glass device at low applied voltages showed current bistabilities with three states, indicative of multilevel characteristics. A reliable intermediate state was realized under positive and negative applied voltages. The carrier transport and the memory mechanisms of the devices were described on the basis of the I-V curves and energy band diagrams, respectively. The write-read-erase-read-erase-read sequence of the devices showed rewritable, nonvolatile, multilevel, and memory behaviors. The currents as functions of the retention time showed that three current states were maintained for retention times larger than 1 x 10(4) s, indicative of the good stability of the devices. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) (2013R1A2A1A01016467) funded by the Ministry of Education, Science and Technology (2013R1A2A1A01016467). This work was also supported by the National Natural Science Foundation of China (61377027).en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectResistive memory deviceen_US
dc.subjectMultilevel characteristicsen_US
dc.subjectCdSe/ZnS QDen_US
dc.subjectPMMAen_US
dc.subjectMemory mechanismsen_US
dc.titleCarrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocompositesen_US
dc.typeArticleen_US
dc.relation.volume28-
dc.identifier.doi10.1016/j.orgel.2015.10.002-
dc.relation.page20-24-
dc.relation.journalORGANIC ELECTRONICS-
dc.contributor.googleauthorMa, Zehao-
dc.contributor.googleauthorWu, Chaoxing-
dc.contributor.googleauthorLee, Dea Uk-
dc.contributor.googleauthorLi, Fushan-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2016003624-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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