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Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites

Title
Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites
Author
김태환
Keywords
Resistive memory device; Multilevel characteristics; CdSe/ZnS QD; PMMA; Memory mechanisms
Issue Date
2016-01
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 28, Page. 20-24
Abstract
Multilevel resistive memory devices with an intermediate state were fabricated utilizing a poly(methylmethacrylate) (PMMA) layer sandwiched between double-stacked PMMA layers containing CdSe/ZnS core shell quantum dots (QDs). The current voltage (I-V) curves on a Al/[PMMA:CdSe/ZnS QD]/PMMA/[PMMA:CdSe/ZnS QD]/indium-tin-oxide/glass device at low applied voltages showed current bistabilities with three states, indicative of multilevel characteristics. A reliable intermediate state was realized under positive and negative applied voltages. The carrier transport and the memory mechanisms of the devices were described on the basis of the I-V curves and energy band diagrams, respectively. The write-read-erase-read-erase-read sequence of the devices showed rewritable, nonvolatile, multilevel, and memory behaviors. The currents as functions of the retention time showed that three current states were maintained for retention times larger than 1 x 10(4) s, indicative of the good stability of the devices. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S1566119915301440?via%3Dihubhttp://hdl.handle.net/20.500.11754/31475
ISSN
1566-1199; 1878-5530
DOI
10.1016/j.orgel.2015.10.002
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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