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Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions

Title
Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions
Author
박재근
Keywords
COFEB THIN-FILMS; MAGNESIUM; ANISOTROPY
Issue Date
2016-01
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 1, Page. 135-141
Abstract
For Co2Fe6B2-MgO based p-MTJ spin valves with [Co/Pt](n)-SyAF layers ex situ annealed at 350 degrees C and 30 kOe for 30 min, the tunneling magneto-resistance (TMR) ratio strongly depended on the radio-frequency (RF) sputtering power in a 0.65-1.15 nm thick MgO tunneling barrier, achieving a TMR ratio of 168% at 300 W. The TMR ratio rapidly and linearly increased with a decrease in the RF sputtering power between 300 and 500 W and then abruptly decreased at 250 W since the face-centered-cubic crystallinity of the tunneling barrier improved with a decrease in the RF sputtering power between 300 and 500 W and then abruptly degraded at 250 W. Optical properties measured by spectroscopic ellipsometry, such as the defect state density and energy band gap of a similar to 1.0 nm thick tunneling barrier layer, indicate that the RF sputtering power needed to obtain a larger poly grain size for the barrier tends to enhance the barrier's face-centered-cubic crystallinity.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C5TC03669K#!divAbstracthttp://hdl.handle.net/20.500.11754/31432
ISSN
2050-7526; 2050-7534
DOI
10.1039/c5tc03669k
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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