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The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer

Title
The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
Author
전형탁
Keywords
gate spacers; NH3 plasma; plasma power; remote plasma atomic layer deposition; silicon nitrides; thin films
Issue Date
2015-12
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v. 212, NO 12, Page. 2785-2790
Abstract
We investigated the effects of NH3 plasma power on characteristics of low-temperature silicon nitride thin films for application of a gate spacer. SiNx thin film was deposited on a Si(100) substrate by remote plasma atomic layer deposition (RPALD) using trisilylamine (TSA) as a Si precursor and NH3 gas as a reactant. NH3 remote plasma was analyzed with optical emission spectroscopy (OES) and it largely consisted of NH and H. As the plasma power increased, more NH and H radicals were generated and a proportion of NH radicals in the plasma increased, which resulted in the slight increase of the high-N content and low-H content in SiNx thin film. The low-H content with nearly stoichiometric SiNx thin films improve etch rate properties. The densities of RPALD SiNx thin film were 2.7 g cm(-3) and almost the same regardless of plasma power. RPALD SiNx thin films showed a low leakage current density of 10(-7)A cm(-2) at 2 MV cm(-1) and a breakdown voltage of approximately 8 MV cm(-1). (C) 2015 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim
URI
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532274/abstracthttp://hdl.handle.net/20.500.11754/30128
ISSN
1862-6300; 1862-6319
DOI
10.1002/pssa.201532274
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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