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Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells

Title
Efficacy of In2S3 interfacial recombination barrier layer in PbS quantum-dot-sensitized solar cells
Author
방진호
Keywords
QDSSCs; Interfacial recombination barrier; Indium sulfide; SILAR
Issue Date
2015-12
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v. 653, Page. 228-233
Abstract
In2S3 interfacial recombination barrier layer (IBL) via successive ionic layer adsorption and reaction (SILAR) was successfully employed between PbS quantum dots and mesoporous TiO2 in quantum-dot-sensitized solar cells (QDSSCs). In2S3 IBL significantly increased the resistance against back electron transfer from TiO2, resulting an increment in the photocurrent density (JSC) for the cell with single SILAR cycle of In2S3 IBL. Further increase in the number of SILAR cycles of In2S3 IBL deteriorated the JSC, whereas open-circuit voltage sustained the increasing trend. Therefore, an optimal photo-conversion efficiency of similar to 2.2% was obtained for the cell with 2 SILAR cycles of In2S3 IBL, which strategically reached a value of similar to 2.70% after annealing (increased by 40% compared to the control cell without IBL). In2S3 IBL not only improved the recombination resistance and electron life time of the cells, but it also enhanced the photostability of the cells. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0925838815309336?via%3Dihubhttp://hdl.handle.net/20.500.11754/29450
ISSN
0925-8388; 1873-4669
DOI
10.1016/j.jallcom.2015.08.237
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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