Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing

Title
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing
Authors
최창환
Keywords
Plasma hydrogen passivation; SiC; Power device; ALD Al2O3
Issue Date
2015-11
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 147, Page. 239-243
Abstract
Hydrogen (H-2) plasma treatment at the interface between 4H-SiC substrate and Al2O3 dielectric prepared by the atomic layer deposition (ALD) was performed and its effects on capacitance-voltage characteristics as well as the interface state density (D-it) was evaluated with metal oxide semiconductor devices. The atomic force microscopy result indicates that the remote H-2 plasma treatment reduces surface roughness. Compared with the non-passivated devices, lower leakage current, lower hysteresis and higher breakdown voltage are attained with remotely hydrogen plasma-treated devices. Without post metallization annealing (PMA), D-it value more than 10(14) eV(-1) cm(-2) is attained with hydrogen plasma passivated devices, indicating plasma-induced damage on the surface. However, using PMA, D-it of the H-2 plasma treated device is significantly reduced to as low as 1.00 x 10(12) eV(-1) cm(-2) at E-c - E-t = 0.4 eV and is about five times lower than that of sample without H-2 plasma passivation (D-it = 4.84 x 10(12) eV(-1) cm(-2)). (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0167931715002713?via%3Dihubhttp://hdl.handle.net/20.500.11754/29138
ISSN
0167-9317; 1873-5568
DOI
http://dx.doi.org/10.1016/j.mee.2015.04.059
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ETC
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