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Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

Title
Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers
Author
김태환
Keywords
Graphene quantum dots; silver nanowires; flexible; non-volatile memory
Issue Date
2015-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 36, NO 11, Page. 1212-1214
Abstract
Non-volatile memory (NVM) devices using graphene quantum dots (GQDs) as charge trapping sites were fabricated with silver nanowires as top electrodes using solution process. The stacking structure consists of GQDs embedded between polymethylsilsesquioxane layers constructed on transparent flexible substrate. Hysteresis window was observed in the current-voltage plots, and the NVM devices are reprogrammable and stable up to 1 x 10(4) s with a distinct ON/OFF ratio of 10(4). In addition, the memory device shows the stable hysteresis window without obvious degradation upon bending under different curvature radii.
URI
http://ieeexplore.ieee.org/document/7272044/http://hdl.handle.net/20.500.11754/29086
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2015.2480119
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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