223 0

Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures

Title
Stability Improvement of In-Sn-Ga-O Thin-Film Transistors at Low Annealing Temperatures
Author
박진성
Keywords
Flexible display; indium-tin-gallium oxide; low temperature annealing; reliability; transistors
Issue Date
2015-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 36, NO 11, Page. 1160-1162
Abstract
Thin-film transistors (TFTs) based on In-Sn-Ga-O (ITGO) semiconductors were evaluated with respect to different post-annealing temperatures (200 degrees C similar to 350 degrees C). High-performance devices were obtained, exhibiting field-effect mobility values exceeding 25 cm(2)/Vs at all thermal treatments. However, the threshold voltage shift (Delta V-th) under negative bias stress increased with increasing annealing temperature, which is opposite to what is generally observed in oxide semiconductor TFTs. It is suggested that annealing at elevated temperatures results in relatively large concentrations of oxygen deficient sites in ITGO. These defects act as sources of excess electron carriers, which induce large Vth shifts upon negative bias stress. Relatively low process temperatures are thus preferred in ITGO TFTs, which are anticipated to pave the way for the development of flexible displays.
URI
http://ieeexplore.ieee.org/document/7268851/http://hdl.handle.net/20.500.11754/29009
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2015.2478956
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE