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Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer

Title
Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer
Author
박재근
Keywords
magnetic-tunnel-junction; perpendicular-spin-transfer-torque-magnetic-random-access-memory; synthetic-antiferromagnetic; tunneling magneto-resistance ratio; exchange field
Issue Date
2015-11
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 26, NO 47, Page. 475705-475705
Abstract
We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt](n) lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H-ex) of 1.4 kOe at an ex situ annealing temperature of ˃350 degrees C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t(bcc)), i.e., the TMR ratio peaks at t(bcc) = 0.6 nm.
URI
http://iopscience.iop.org/article/10.1088/0957-4484/26/47/475705/meta;jsessionid=1EEEF1EF341C8BFB0A2E67E32DD1C5C0.c4.iopscience.cld.iop.orghttp://hdl.handle.net/20.500.11754/28964
ISSN
0957-4484; 1361-6528
DOI
10.1088/0957-4484/26/47/475705
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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