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Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

Title
Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
Author
이용은
Keywords
CHEMICAL-VAPOR-DEPOSITION; POLYCRYSTALLINE GRAPHENE; GRAIN-BOUNDARIES; FILMS; ELECTRODES; TRANSPORT; PROSPECTS; GROWTH
Issue Date
2015-11
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v. 7, NO 42, Page. 17702-17709
Abstract
Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR05392G#!divAbstracthttp://hdl.handle.net/20.500.11754/28854
ISSN
2040-3364; 2040-3372
DOI
10.1039/c5nr05392g
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RESEARCH INSTITUTE[S](부설연구소) > ETC
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