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Visible-light phototransistors based on InGaZnO and silver nanoparticles

Title
Visible-light phototransistors based on InGaZnO and silver nanoparticles
Author
박진성
Keywords
SILICON; TRANSISTORS; ARRAYS; SENSOR; LAYER; GAP
Issue Date
2015-11
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 33, NO 6, Page. 1-4
Abstract
Visible-light phototransistors were fabricated using wide-bandgap indium gallium zinc oxide (IGZO) and silver (Ag) nanoparticles (NPs). A bottom gate made of thin film transistors (TFTs) was fabricated with an amorphous IGZO film as the active channel. Ag NPs were then formed on the surface of the active channel region to be used as a visible-light absorption layer. The prepared Ag NPs were highly absorptive in the wavelength range of 450-600 nm, due to the plasmon effect. A detailed study of photoresponsivity and external quantum efficiency indicated that the TFTs with Ag NPs induced a large photocurrent upon illumination by visible light on the active region, while the TFTs without Ag NPs did not. This result indicates the presence of coupling between the localized plasmons and electrical carriers on the IGZO TFTs with Ag NPs. (C) 2015 American Vacuum Society.
URI
http://avs.scitation.org/doi/10.1116/1.4936113http://hdl.handle.net/20.500.11754/28734
ISSN
1071-1023
DOI
10.1116/1.4936113
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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