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Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping

Title
Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping
Author
전형탁
Keywords
Thin Film Transistors (TFTs); Hafnium-Tin Oxide (HTO); Hafnium-Zinc-Tin Oxide (HZTO); Positive Bias Temperature Stability (PBTS)
Issue Date
2015-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 15, Page. 7606-7610
Abstract
We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm(2)/Vs, and a high I-ON/I-OFF ratio over 10(8).
URI
http://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00038http://hdl.handle.net/20.500.11754/28362
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2015.11155
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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