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Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes

Title
Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes
Author
신동수
Keywords
Light emitting diodes; Temperature measurement; Photoconductivity; Quantum well devices; Capacitance-voltage characteristics; Power generation; Voltage measurement
Issue Date
2015-10
Publisher
The Japan Society of Applied Physics
Citation
20th Microoptics Conference (MOC’15), Fukuoka, Japan, Oct. 25 - 28, 2015, Page. 70-71
Abstract
To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements.
URI
http://ieeexplore.ieee.org/document/7416402/http://hdl.handle.net/20.500.11754/28060
ISBN
978-4-8634-8486-3
DOI
10.1109/MOC.2015.7416402
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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