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Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Title
Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments
Author
전형탁
Keywords
RRAM; CBRAM; Resistive switching; TaOx; Conductive filament
Issue Date
2015-09
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 15, NO 9, Page. 1005-1009
Abstract
Forming-free and self-compliant bipolar resistive switching is observed in Cu/TaOx/TiN conductive bridge random access memory. Generally, Pt has been investigated as an inert electrode. However, Pt is not desirable material in current semiconductor industry for mass production. In this study, all electrodes are adapted to complementary metal-oxide-semiconductor compatible materials. The self-compliant resistive switching is achieved via usage of TiN bottom electrode. Also, dissolved Cu ions in TaOx lead to forming-free resistive switching behavior. The resistive switching mechanism is formation and rupture of combined oxygen vacancy/metallic copper conductive filament. We propose that Cu/TaOx/TiN is a promising candidate for a conductive bridge random access memory structure. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S156717391500190Xhttp://hdl.handle.net/20.500.11754/27653
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2015.06.002
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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