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Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Title
Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses
Author
전형탁
Keywords
MEMORIES; RRAM
Issue Date
2015-09
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 33, NO 5, Page. 1204-1204
Abstract
The fabricated Au/Ti/TaOx/TiN devices demonstrate nonlinear behavior at a low resistance state and a complementary resistive switching (CRS) behavior that is dependent upon the thickness of the Ti insertion layer. The nonlinear behavior can be explained by the presence of an ultrathin TiOx layer that acts as a tunnel barrier. In addition, the CRS behavior can be understood in relation to the redistribution of oxygen vacancies between the Ti/TaOx top interfaces. A thicker Ti insertion layer forms a thicker TiOx layer at the Ti/TaOx interface, which can serve as another switching layer. The Au/Ti/TaOx/TiN devices in this study are fabricated with fully complementary metal-oxide-semiconductor-compatible materials and exhibit nonlinear behavior at a low resistance state and a CRS behavior that present possible solutions for the suppression of the sneak current in the crossbar arrays. (C) 2015 American Vacuum Society.
URI
http://avs.scitation.org/doi/abs/10.1116/1.4927368http://hdl.handle.net/20.500.11754/27652
ISSN
1071-1023
DOI
10.1116/1.4927368
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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