Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates
- Title
- Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates
- Author
- 박진성
- Keywords
- Amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); alumina buffer; atomic layer deposition (ALD)
- Issue Date
- 2015-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 36, NO 9, Page. 917-919
- Abstract
- Flexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide substrates. The effect of the alumina buffer layers on the device performance and stability is demonstrated using two types of atomic layer deposition reactant sources: 1) ozone and 2) water. Alumina buffers formed by water reactants have better barrier properties against the ambient than those formed by ozone. Furthermore, less charge trapping at sub-gap density-of-states occurs with higher film density of the buffer layer. Stability characteristics under negative bias temperature stress are enhanced by optimization of the buffer layer formation on flexible substrates.
- URI
- http://ieeexplore.ieee.org/abstract/document/7167653/http://hdl.handle.net/20.500.11754/27576
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2015.2461003
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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