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Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

Title
Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates
Author
박진성
Keywords
Amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); alumina buffer; atomic layer deposition (ALD)
Issue Date
2015-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 36, NO 9, Page. 917-919
Abstract
Flexible top-gate amorphous InGaZnO thin-film transistors are fabricated on polyimide substrates. The effect of the alumina buffer layers on the device performance and stability is demonstrated using two types of atomic layer deposition reactant sources: 1) ozone and 2) water. Alumina buffers formed by water reactants have better barrier properties against the ambient than those formed by ozone. Furthermore, less charge trapping at sub-gap density-of-states occurs with higher film density of the buffer layer. Stability characteristics under negative bias temperature stress are enhanced by optimization of the buffer layer formation on flexible substrates.
URI
http://ieeexplore.ieee.org/abstract/document/7167653/http://hdl.handle.net/20.500.11754/27576
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2015.2461003
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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