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Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory

Title
Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory
Author
전형탁
Keywords
RESISTIVE SWITCHING MEMORIES; RANDOM-ACCESS MEMORY; CHALLENGES; TRANSITION; FILMS
Issue Date
2015-08
Publisher
ROYAL SOC CHEMISTRY
Citation
RSC ADVANCES, v. 5, NO 84, Page. 68900-68905
Abstract
In this study, NH3 plasma treatment was utilized to enhance the resistive switching (RS) properties. Au/Ni/TaOx/NiSi and Au/Ni/NH3 plasma-treated TaOx/NiSi resistance RAM (RRAM) devices were fabricated and the resistive switching (RS) properties of these devices were subsequently investigated. Both RRAM devices exhibited conventional electrochemical metallization memory (ECM) behaviors. However, the NH3 plasma-treated samples exhibited improved resistance distribution compared with that of non-treated samples due to the remaining Ni conductive filaments (CF), even following a RESET process. Additionally, superior retention properties longer than 10(4) s were observed due to the formation of stable Ni CFs. The formation of a defect-minimized TaON layer, observed via X-ray photoelectron spectroscopy (XPS), could be the source of stability for the Ni CFs, resulting in improved device behavior for the NH3 plasma-treated samples.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2015/RA/C5RA11580A#!divAbstracthttp://hdl.handle.net/20.500.11754/26969
ISSN
2046-2069
DOI
10.1039/c5ra11580a
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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