Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

Title
Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination
Authors
최덕균
Keywords
X-RAY PHOTOEMISSION; TASIN; MEMORY; ELECTRODE; FUTURE
Issue Date
2015-08
Publisher
AMER INST PHYSICS
Citation
AIP ADVANCES, v. 5, NO 8, Page. 871311-871316
Abstract
Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiOx-capped Si, and SiO2-capped Si were observed and analyzed using SEM and Si 2p and Ta 4 f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
URI
http://aip.scitation.org/doi/abs/10.1063/1.4928576http://hdl.handle.net/20.500.11754/26931
ISSN
2158-3226
DOI
http://dx.doi.org/10.1063/1.4928576
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COLLEGE OF ENGINEERING[S](공과대학) > ETC
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