All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

Title
All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
Authors
박재근
Keywords
NONVOLATILE MEMORY DEVICE; TRANSITION-METAL OXIDES; HIGH-CURRENT-DENSITY; THIN-FILMS; RESISTIVE SWITCHES; STORAGE; TRANSISTORS; DIODES
Issue Date
2015-08
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v. 5, Page. 13362-13362
Abstract
Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.
URI
https://www.nature.com/articles/srep13362?WT.ec_id=SREP-639-20150825&spMailingID=49395763&spUserID=ODkwMTM2NjQzMgS2&spJobID=743816990&spReportId=NzQzODE2OTkwS0http://hdl.handle.net/20.500.11754/26860
ISSN
2045-2322
DOI
http://dx.doi.org/10.1038/srep13362
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > DEPARTMENT OF ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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