Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박종완 | - |
dc.date.accessioned | 2017-04-19T02:02:34Z | - |
dc.date.available | 2017-04-19T02:02:34Z | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | SURFACE & COATINGS TECHNOLOGY, v. 276, Page. 254-259 | en_US |
dc.identifier.issn | 0257-8972 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0257897215300839 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/26799 | - |
dc.description.abstract | In our previous studies, vanadium (V)-based self-formed barriers were found at the interface between Cu-V alloy films and low-k/Si substrates after annealing at elevated temperatures. In the present work, the diffusion barrier properties of the V-based self-formed interlayer on low-k dielectrics were investigated with and without UV curing treatment. A V-based interlayer on a low-k substrate with UV curing exhibited lower electrical resistivity and higher thermal stability than on a low-k substrate without UV curing. Transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) showed that an approximately 4-nm V-based interlayer was found only on the low-k substrates with UV curing after annealing at 300 degrees C for 1 h. Based on these results, UV curing may play an important role in the formation of a V-based interlayer due to changes in the chemical composition and porosity of the dielectric layer. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work was performed with the support of Samsung Electronics Co. and helpful operators of TEM analysis at the Industry-University Cooperation Foundation of Hanyang University. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Copper diffusion barrier | en_US |
dc.subject | Self-forming barrier | en_US |
dc.subject | Low-k | en_US |
dc.subject | UV curing | en_US |
dc.title | Effects of UV curing on the self-forming barrier process of Cu-V alloy films | en_US |
dc.type | Article | en_US |
dc.relation.volume | 276 | - |
dc.identifier.doi | 10.1016/j.surfcoat.2015.06.049 | - |
dc.relation.page | 254-259 | - |
dc.relation.journal | SURFACE & COATINGS TECHNOLOGY | - |
dc.contributor.googleauthor | Park, Jae-Hyung | - |
dc.contributor.googleauthor | Kang, Min-Soo | - |
dc.contributor.googleauthor | Han, Dong-Suk | - |
dc.contributor.googleauthor | Choi, Duck-Kyun | - |
dc.contributor.googleauthor | Park, Jong-Wan | - |
dc.relation.code | 2015001477 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jwpark | - |
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