N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석

Title
N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석
Other Titles
Analysis on bowing and formation of Al doped P+ layer by changes of thickness of N-type wafer and amount of Al paste
Authors
김영도
Keywords
solar cell; n-type; thin wafer; bowing; Al doped p+ layer
Issue Date
2015-07
Publisher
Materials Research Society of Korea
Citation
한국재료학회지, v. 25, NO 1, Page. 16-20
Abstract
In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of 120 μm, 130 μm, 140 μm. Formation of the Al doped p+ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped p+ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of 5.34 mg/cm2 of Al paste, wafer bowing in a thickness of 140 μm reached a maximum of 2.9 mm and wafer bowing in a thickness of 120 μm reached a maximum of 4 mm. The study’s results suggest that when considering uniformity and thickness of an Al doped p+ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is 4.72 mg/cm2 in a wafer with a thickness of 120 μm.
URI
http://journal.mrs-k.or.kr/journal/article.php?code=21808http://hdl.handle.net/20.500.11754/26189
ISSN
1225-0562; 2287-7258
DOI
http://dx.doi.org/10.3740/MRSK.2015.25.1.16
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ETC
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE