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Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors

Title
Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors
Author
박진성
Keywords
ZnO; ZnON; Oxide semiconductor; X-ray absorption; Thin film transistor
Issue Date
2015-07
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 41, NO 10, Page. 13281-13284
Abstract
Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 degrees C, ZnON devices exhibit superior electrical performance (mu(sat)=56.3 cm(2)/Vs, Vth = -1.59 V, and SS =0.51 V/dec) in comparison with ZnO devices (mu(sat)= 0.99 cm2/Vs, Vth=3.28 V, and SS =1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn-N bonds. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0272884215014005http://hdl.handle.net/20.500.11754/26051
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2015.07.110
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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