Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films

Title
Resistive switching characteristics and conduction mechanisms of nonvolatile memory devices based on Ga and Sn co-doped ZnO films
Authors
김태환
Keywords
Nonvolatile memory devices; Gallium zinc tin oxide; Solution process; Bipolar resistive switching behavior; Conduction mechanisms
Issue Date
2015-07
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 587, NO TSF-D-14-01592, Page. 71-74
Abstract
Nonvolatile memory devices were fabricated utilizing Ga and Sn co-doped ZnO (GZTO) films formed by using a solution process method. X-ray diffraction patterns showed that the crystallinity of the annealed GZTO films was an amorphous phase. X-ray photoelectron spectroscopy spectra of the GZTO films depicted Zn - O, Ga - O, and Sn - O bonds. Current-voltage measurements on the Al/GZTO/indium-tin-oxide (ITO) devices at 300 K showed bipolar resistive switching behaviors. The resistances at both the low resistance state (LRS) and high resistance state (HRS) measured at 0.5 V for the devices maintain almost constant without any damage and breakdown above 130 s, indicative of the memory stability of the devices. A difference in the resistance between the HRS and the LRS was more than 1 order of the magnitude. The conduction mechanisms of the HRS in the set process for the Al/GZTO/ITO devices were dominated by a space-charge-limited current model. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0040609014012802http://hdl.handle.net/20.500.11754/25984
ISSN
0040-6090
DOI
http://dx.doi.org/10.1016/j.tsf.2014.12.021
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > DEPARTMENT OF ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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