Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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dc.contributor.author김태환-
dc.date.accessioned2017-03-06T01:09:00Z-
dc.date.available2017-03-06T01:09:00Z-
dc.date.issued2015-06-
dc.identifier.citationAPPLIED PHYSICS EXPRESS, v. 8, NO 6, Page. 1-4en_US
dc.identifier.issn1882-0778-
dc.identifier.issn1882-0786-
dc.identifier.urihttp://iopscience.iop.org/article/10.7567/APEX.8.061201/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/25842-
dc.description.abstractCdSe/CdS core-shell quantum dots (QDs) were synthesized using a facile method in aqueous phase. X-ray diffraction pattern, high-resolution transmission electron microscopy images, and energy dispersive spectroscopy profiles showed that stoichiometric CdSe/CdS QDs were formed. Temperature-dependent photoluminescence spectra showed that the activation energy of CdSe/CdS core-shell QDs was 15 meV. The potential profiles and interband transition energies of the strained type-II CdSe/CdS core-shell QDs were calculated. The calculated interband transition energies slightly decreased from 2.061 to 2.007 eV when the shell thickness increased from 10 to 17. The theoretical interband transition energy of 2.007 eV was in reasonable agreement with the photoluminescence excitonic transition energy of 1.98 eV. (C) 2015 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467).en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectLIGHT-EMITTING-DIODESen_US
dc.subjectNANOCRYSTALSen_US
dc.subjectEFFICIENCYen_US
dc.subjectCONVERSIONen_US
dc.subjectDEVICESen_US
dc.subjectZNSen_US
dc.subjectCDSen_US
dc.titleOptical and electronic properties of type-II CdSe/CdS core-shell quantum dotsen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume8-
dc.identifier.doi10.7567/APEX.8.061201-
dc.relation.page1-4-
dc.relation.journalAPPLIED PHYSICS EXPRESS-
dc.contributor.googleauthorLee, Dea Uk-
dc.contributor.googleauthorYun, Dong Yeol-
dc.contributor.googleauthorKim, Tae Whan-
dc.contributor.googleauthorPark, Seoung-Hwan-
dc.contributor.googleauthorChoi, Donghyeuk-
dc.contributor.googleauthorKim, Sang Wook-
dc.contributor.googleauthorYoo, Keon-Ho-
dc.contributor.googleauthorLee, Hong Seok-
dc.contributor.googleauthorKwon, Young Hae-
dc.contributor.googleauthorKang, Tae Won-
dc.relation.code2015001466-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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