Enhancement of photoluminescence efficiency from semi-polar InGaN/GaN multiple quantum wells with silver metal

Title
Enhancement of photoluminescence efficiency from semi-polar InGaN/GaN multiple quantum wells with silver metal
Authors
김은규
Keywords
Semi-polar GaN; InGaN/GaN light emitting diode; Multi-quantum wells; Surface plasmon polariton; Localized surface plasmon
Issue Date
2015-06
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF LUMINESCENCE, v. 162, Page. 115-118
Abstract
We have studied the effect of surface plasmon polariton (SPP) and localized surface plasmon (LSP) on the emission of semi-polar InGaN/GaN light emitting diode (LED) with multi-quantum wells structure. From the photoluminescence (PL) measurement at room temperature, spectrally-integrated enhancements of semi-polar SPP LEDs with 15 and 40-nm-thick Ag films were 1.7 and 2.9, respectively. The absorbance peak of Ag nanoparticles was red-shifted as diameter of Ag nanoparticles increases. However, the absorbance peak of Au nanoparticles was not related with their diameters. Spectrally-integrated enhancement of semi-polar LSP LED with 250-nm-diameter Ag nanoparticles was shown to 1.3. These results showed that the blue emission of semi-polar InGaN/GaN LED can be improved by SPP and LSP. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0022231315000836http://hdl.handle.net/20.500.11754/25829
ISSN
0022-2313; 1872-7883
DOI
http://dx.doi.org/10.1016/j.jlumin.2015.02.012
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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