The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure

Title
The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure
Authors
박진성
Keywords
Oxide semiconductor; Thin film transistor; Oxygen partial pressure; Stability
Issue Date
2015-06
Publisher
SPRINGER
Citation
JOURNAL OF ELECTROCERAMICS, v. 34, NO 4, Page. 229-235
Abstract
This paper addresses changes in device performance for GeGaInOx (GGIO) thin film transistors deposited as a function of process pressures, and the mechanisms responsible for electronic band structure and defect states within sub-gap states. As the process pressure decreased from 5 to 1 mTorr during sputtering of the GGIO active layer, the saturation mobility increased from 6.51 to 11.18 cm(2)/Vs and the sub-threshold swing value decreased from 0.64 to 0.21 V/decade. Conduction band areas measured by x-ray absorption spectroscopy in GGIO films increased as the total process pressure decreased from 5 to 1 mTorr, which can help charge transport in GGIO semiconductors. In addition, the Delta Vth shift during positive bias temperature stability for 3 h was also enhanced from 17.5 to 6.2 V. This improvement can be attributed to the reduction of relative near conduction band edge defect states, which was found in not only at the GGIO films level by spectral ellipsometry, but also at the device level by the Meyer-Neldel rule.
URI
http://link.springer.com/article/10.1007/s10832-014-9978-1http://hdl.handle.net/20.500.11754/25702
ISSN
1385-3449; 1573-8663
DOI
http://dx.doi.org/10.1007/s10832-014-9978-1
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ETC
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE