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dc.contributor.author박재근-
dc.date.accessioned2017-01-10T07:37:36Z-
dc.date.available2017-01-10T07:37:36Z-
dc.date.issued2015-06-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 12, Page. 1885-1888en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttp://link.springer.com/article/10.3938%2Fjkps.66.1885-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/25026-
dc.description.abstractThe electrical characteristics of a nanolaminated atomic layer deposition (ALD) HfAlO/InGaAs metal-oixde-semiconductor (MOS) capacitor with NH3 plasma passivation are investigated. Results show that the samples with NH3 plasma passivation exhibit better capacitance behavior with relatively small frequency dispersion in the inversion region than the unpassivated sample. The leakage current level of the NH3 plasma-passivated samples shows a much lower value compared to the unpassivated sample. The mid-gap value for the density of interface traps, D (it) , also shows that NH3 plasma-passivated samples have relatively low values compared to the unpassivated sample. Superior electrical performance, compared to the unpassivated sample, was demonstrated with NH3 plasma passivation through those electrical characterizations.en_US
dc.language.isoenen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectHigh-ken_US
dc.subjectGate dielectricen_US
dc.subjectALDen_US
dc.subjectHfAlOen_US
dc.subjectInGaAsen_US
dc.subjectPlasma passivationen_US
dc.titleEffect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitoren_US
dc.typeArticleen_US
dc.relation.no12-
dc.relation.volume66-
dc.identifier.doi10.3938/jkps.66.1885-
dc.relation.page1885-1888-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorChoi, Jae-Sung-
dc.contributor.googleauthorPark, Jea-Gun-
dc.relation.code2015000007-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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