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Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

Title
Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
Author
박재근
Keywords
High-k; Gate dielectric; ALD; HfAlO; InGaAs; Plasma passivation
Issue Date
2015-06
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 12, Page. 1885-1888
Abstract
The electrical characteristics of a nanolaminated atomic layer deposition (ALD) HfAlO/InGaAs metal-oixde-semiconductor (MOS) capacitor with NH3 plasma passivation are investigated. Results show that the samples with NH3 plasma passivation exhibit better capacitance behavior with relatively small frequency dispersion in the inversion region than the unpassivated sample. The leakage current level of the NH3 plasma-passivated samples shows a much lower value compared to the unpassivated sample. The mid-gap value for the density of interface traps, D (it) , also shows that NH3 plasma-passivated samples have relatively low values compared to the unpassivated sample. Superior electrical performance, compared to the unpassivated sample, was demonstrated with NH3 plasma passivation through those electrical characterizations.
URI
http://link.springer.com/article/10.3938%2Fjkps.66.1885http://hdl.handle.net/20.500.11754/25026
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.66.1885
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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